DSpace JSPUI
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Learn MoreBrowsing by Subject Lanthanum (La) capping layer
Showing results 1 to 1 of 1
| Issue Date | Title | Author(s) |
|---|---|---|
| 22-Jun-2021 | Effect of device dimensions, layout and Pre-Gate carbon implant on hot carrier induced degradation in HKMG nMOS transistors | Duhan, P.; Rao, V. R.; Mohapatra, N. R. |