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dc.contributor.authorKumar, S.-
dc.contributor.authorSharma, R.-
dc.date.accessioned2019-05-16T16:13:37Z-
dc.date.available2019-05-16T16:13:37Z-
dc.date.issued2019-05-16-
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/1253-
dc.description.abstractPlanar copper interconnects suffer from surface roughness that results in performance degradation. This paper presents a novel analytical model for calculation effective resistivity and mean free path in on-chip copper interconnects. The closed form expressions are obtained from a generalized surface and grain boundary scattering approach that is combined with Mandelbrot-Weierstrass (MW) fractal function. It is observed that resistivity increases while mean free path reduces significantly for rough on-chip interconnects when compared with that of smooth lines. Current and future technology nodes i.e., 45 nm, 22 nm, 13 nm and 7 nm are considered for our analysis. The analytical models are validated against industry standard field solvers Ansys Q3D Extractor and previous data available in literature that exhibit excellent accuracy. Finally, we also present computational overhead in terms of simulation time, matrix size, number of tetrahedrons and memory for different values of roughness and technology nodes.en_US
dc.language.isoen_USen_US
dc.subjectOn-chip interconnectsen_US
dc.subjectSurface roughnessen_US
dc.subjectFractalsen_US
dc.subjectResistivityen_US
dc.subjectMean free pathen_US
dc.subjectResistanceen_US
dc.subjectCurrent densityen_US
dc.titleAnalytical model for resistivity and mean free path in on-chip interconnects with rough surfacesen_US
dc.typeArticleen_US
Appears in Collections:Year-2018

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