Please use this identifier to cite or link to this item: http://dspace.iitrpr.ac.in:8080/xmlui/handle/123456789/1505
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dc.contributor.authorChawla, V.-
dc.contributor.authorSardana, N.-
dc.contributor.authorKaur, H.-
dc.contributor.authorKumar, A.-
dc.contributor.authorChandra, R.-
dc.contributor.authorMishra, S.-
dc.date.accessioned2020-03-09T10:00:41Z-
dc.date.available2020-03-09T10:00:41Z-
dc.date.issued2020-03-09-
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/1505-
dc.description.abstractThe present work focuses on the study of annealing parameters and activation top layer on the growth of copper oxide nanowires. The copper films of varying thickness (60–800 nm) were synthesized on SiO2/Si substrate by DC magnetron sputtering and the samples annealed in terms of different parameters, especially the optimized annealing temperatures from 300 to 700 °C for 2–8 hrs to understand the growth mechanism and to optimize parameters for the nanowire formation. Furthermore, a thin conductive gold film as an activation top layer enhances the density and aspect ratio of the copper oxide nanowires. The orientation of crystal planes was characterized by XRD and the nanowires growth after annealing was characterized by SEM. The changes in the film were analyzed by the Raman spectroscopy.en_US
dc.language.isoen_USen_US
dc.subjectSputteringen_US
dc.subjectCopper filmsen_US
dc.subjectNanowiresen_US
dc.subjectAnnealingen_US
dc.subjectGold layeren_US
dc.subjectSEMen_US
dc.titleEffect of annealing parameters and activation top layer on the growth of copper oxide nanowiresen_US
dc.typeArticleen_US
Appears in Collections:Year-2020

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