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Please use this identifier to cite or link to this item: http://dspace.iitrpr.ac.in:8080/xmlui/handle/123456789/1541
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dc.contributor.authorReza, A.-
dc.contributor.authorVatsa, V.-
dc.contributor.authorPose, M.S.-
dc.contributor.authorMazumdar, A.-
dc.contributor.authorGarai, A.-
dc.contributor.authorKrishnamoorthy, H.-
dc.contributor.authorGupta, G.-
dc.contributor.authorNanal, V.-
dc.contributor.authorPillay, R.G.-
dc.contributor.authorShrivastava, A.-
dc.date.accessioned2020-03-16T11:38:46Z-
dc.date.available2020-03-16T11:38:46Z-
dc.date.issued2020-03-16-
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/1541-
dc.description.abstractIn this paper, the design and test results of a front-end cryogenic amplifier for a bolometer detector are presented. The amplifier is implemented with two low-noise Si JFETs, where the first FET is configured as a source follower amplifier and the second FET provides a high dynamic resistance to keep the voltage gain very close to unity. A 3 dB bandwidth over a wide range from DC to 10 MHz is achieved in this design. The input voltage noise density is ~ 1.9 nV/√Hz at 300 K, which further reduces to 1.6 nV/√Hz at 120 K. The flicker corner frequency observed is below 50 Hz.en_US
dc.language.isoen_USen_US
dc.subjectCryogenic amplifieren_US
dc.subjectBolometer detectoren_US
dc.subjectLow-noise amplifieren_US
dc.titleA cryogenic front-end preamplifier operating at 120 K for bolometric detectoren_US
dc.typeArticleen_US
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