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dc.contributor.authorBansal, Shonak-
dc.contributor.authorPrakash, Krishna-
dc.contributor.authorSharma, Kuldeep-
dc.contributor.authorSardana, Neha-
dc.contributor.authorKumar, Sanjeev-
dc.contributor.authorGupta, Neena-
dc.contributor.authorSingh, Arun K-
dc.date.accessioned2020-09-29T08:43:27Z-
dc.date.available2020-09-29T08:43:27Z-
dc.date.issued2020-09-29-
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/1584-
dc.description.abstractThis paper presents three self-powered photodetectors namely, p+-bilayer graphene (BLG)/n+-ZnO nanowires (NWs), p+-BLG/n+-Si NWs/p–-Si and p+-BLG/n+-ZnO NWs/p–-Si. The Silvaco Atlas TCAD software is utilized to characterize the optoelectronic properties of all the devices and is validated by analytical modeling. The proposed dual-junction photodetectors cover broadband spectral response varying from ultraviolet to near-infrared wavelengths. The dual-heterojunction broadband photodetector exhibits photocurrent switching with the rise and fall time of 1.48 and 1.27 ns, respectively. At −0.5 V bias, the highest external quantum efficiency, photocurrent responsivity, specific detectivity, and the lowest noise equivalent power of 71%, 0.28 A W−1, 4.2 × 1012 cmHz1/2 W−1, and 2.59 × 10–17 W, respectively, are found for the dual-heterojunction device with a wavelength of 480 nm at 300 K. The proposed nanowires based photodetectors offer great potential to be utilized as next-generation optoelectronic devices.en_US
dc.language.isoen_USen_US
dc.subjectbilayer grapheneen_US
dc.subjectbroadband photodetectorsen_US
dc.subjectnanowireen_US
dc.subjectphotoswitchingen_US
dc.subjectquantum efficiencyen_US
dc.subjectsiliconen_US
dc.subjectZnOen_US
dc.titleA highly efficient bilayer graphene/ZnO/silicon nanowire based heterojunction photodetector with broadband spectral responseen_US
dc.typeArticleen_US
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