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dc.contributor.authorNishad, V. K.-
dc.contributor.authorNishad, A. K.-
dc.contributor.authorKaushik, B. K.-
dc.contributor.authorSharma, R.-
dc.date.accessioned2021-06-13T09:30:05Z-
dc.date.available2021-06-13T09:30:05Z-
dc.date.issued2021-06-13-
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/1804-
dc.description.abstractIn this paper, transport properties of Osmium (Os)-passivated armchair graphene nanoribbons (AGNRs) have been explored for applications in nanoscale interconnects. Os has been used for passivation in place of Hydrogen (H). In general, H-passivation is used to reduce the edge scattering in AGNRs. However, this increases the bandgap of the structure. In our study, it is found that Ospassivation reduces the edge scattering with improvement in metallicity of AGNRs, which makes it suitable for future nanoscale interconnects. We have extracted key parameters, such as transmission spectrum, I-V characteristics, number of conduction channels, Fermi velocity, kinetic inductance and quantum capacitance. We have compared our results with Fepassivated AGNRs. In case of Os-passivated AGNRs, up to eight conduction channels are seen that result in higher currents of up to 4x as compared to Fe-passivated AGNRs.en_US
dc.language.isoen_USen_US
dc.titleFirst principle analysis of os-passivated armchair graphene nanoribbons for nanoscale interconnectsen_US
dc.typeArticleen_US
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