Please use this identifier to cite or link to this item: http://dspace.iitrpr.ac.in:8080/xmlui/handle/123456789/1816
Full metadata record
DC FieldValueLanguage
dc.contributor.authorSharma, S.-
dc.contributor.authorNair, R. V.-
dc.date.accessioned2021-06-13T11:06:51Z-
dc.date.available2021-06-13T11:06:51Z-
dc.date.issued2021-06-13-
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/1816-
dc.description.abstractThe nitrogen-vacancy (NV) center in nanodiamonds has emerged as an excellent platform in quantum technologies due to its applications in spin manipulation and nanoscale sensing. However, their use is limited by the unavoidable charge-state conversion under optical pumping. In this study, we investigate the control of charge-state conversion in NV centers using an engineered photonic environment and thus change the available local density of optical states (LDOS). The spectral- and pump-dependent decay rate measurements are performed to study the redistribution of emission rates due to the change in LDOS and their effect on charge-state conversion. We have achieved an 8% enhancement of emission rate at the zero phonon line which is accompanied with a 10% suppression in the phonon sideband emission rate in the low-pump-power regime. In the high-pump-power regime, the charge-state conversion becomes inevitable and leads to the deterioration of LDOS-induced modification in the NV center emission lifetimes. The results are useful for efficient NV center spin readout and charge-state depletion microscopy utilizing reversible charge-state conversion.en_US
dc.language.isoen_USen_US
dc.titleCharge-state conversion in nitrogen-vacancy centers mediated by an engineered photonic environmenten_US
dc.typeArticleen_US
Appears in Collections:Year-2020

Files in This Item:
File Description SizeFormat 
Fulltext.pdf1.68 MBAdobe PDFView/Open    Request a copy


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.