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dc.contributor.authorYadav, M.-
dc.contributor.authorRavi Shankar, R. V.-
dc.contributor.authorSharma, R.-
dc.date.accessioned2021-08-26T22:57:18Z-
dc.date.available2021-08-26T22:57:18Z-
dc.date.issued2021-08-27-
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/2510-
dc.description.abstractMicrowave assisted synthesis of colloidal Nickel nanocrystals is considered as an efficient technique to control particle size and their uniformity. This method is suitable for large-scale synthesis of the nanocrystals, which can have significant applications in memory devices. In this paper, we report microwave-assisted synthesis of colloidal nickel nanocrystals with an average size distribution of 5 nm. Colloidal nickel nanocrystals are spin coated over silicon dioxide wafer to understand the spin coating process reliability for memory device fabrication. Spin coated wafer surface is studied using atomic force microscopy and energy dispersive X-ray characterization methods. The synthesized nanocrystals are used for fabrication of non-volatile memory devices using spin coating process. We also present the process flow for fabrication and capacitance-voltage (C-V) characteristics of the fabricated device. Our results show significant flat band voltage shift of 4 V that indicates an excellent memory window for memory devicen_US
dc.language.isoen_USen_US
dc.titleMicrowave aided synthesis of colloidal nickel nanocrystals for memory device applicationen_US
dc.typeArticleen_US
Appears in Collections:Year-2019

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