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dc.contributor.authorDhillon, P. K.-
dc.contributor.authorSarkar, S.-
dc.date.accessioned2021-10-26T19:02:05Z-
dc.date.available2021-10-26T19:02:05Z-
dc.date.issued2021-10-27-
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/3146-
dc.description.abstractMorphological studies were done on Si (001) surfaces after rastering them with a 1 keV O2 + ion beam at an angle. The resulting mounded morphology was studied using atomic force microscopy (AFM) measurements. The roughness at different length scales were further extracted and quantified from AFM measurements using scaling analysis. Results indicate two growth regimes of the evolving surface which were evident from the power spectral density (PSD) and interface width analysis of the eroded surfaces. Initially the growth is unstable followed by a stable regime of the nanostructures evolved after about 35 minutes of erosion. Temporal studies done on these surfaces show the onset of shadowing at higher sputtering times thus indicating the breakdown of the growth model at these times.en_US
dc.language.isoen_USen_US
dc.subjectSputteringen_US
dc.subjectatomic force microscopyen_US
dc.subjectmorphology evolutionen_US
dc.titleDual growth modes in ion bombarded Si surfacesen_US
dc.typeArticleen_US
Appears in Collections:Year-2012

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