Please use this identifier to cite or link to this item: http://dspace.iitrpr.ac.in:8080/xmlui/handle/123456789/3398
Title: Benchmarking of FinFET, Nanosheet and Nanowire FET Architectures for Future Technology Nodes
Authors: NAGY, D.
ESPIÑEIRA, G.
INDALECIO, G.
GARCÍA-LOUREIRO, A.J.
KALNA, K.
SEOANE, N.
Keywords: Monte Carlo
Schrödinger Quantum Correction
FinFET
Nanowire
Nanosheet
Issue Date: 5-May-2022
Abstract: Nanosheet (NS) and nanowire (NW) FET architectures scaled to a gate length (LG) of 16 nm and below are benchmarked against equivalent FinFETs. The device performance is predicted using a 3D finite element drift-diffusion/Monte Carlo simulation toolbox with integrated 2D Schrödinger equation based quantum corrections. The NS FET is a viable replacement for the FinFET in high performance (HP) applications when scaled down to LG of 16 nm offering a larger on-current (ION ) and slightly better sub-threshold characteristics. Below LG of 16 nm, the NW FET becomes the most promising architecture offering an almost ideal sub-threshold swing, the smallest off-current (IOF F ), and the largest ION /IOF F ratio out of the three architectures. However, the NW FET suffers from early ION saturation with the increasing gate bias that can be tackled by minimizing interface roughness and/or by optimisation of a doping profile in the device body.
URI: http://localhost:8080/xmlui/handle/123456789/3398
Appears in Collections:Year-2022

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