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dc.contributor.authorAlluri, N.R.-
dc.contributor.authorMaria Joseph Raj, N.P.-
dc.contributor.authorKhandelwal, G.-
dc.contributor.authorPanda, P.K.-
dc.contributor.authorBanerjee, A.-
dc.contributor.authorMishra, Y.K.-
dc.contributor.authorAhuja, R.-
dc.contributor.authorKim, S.-J.-
dc.date.accessioned2022-05-29T09:54:35Z-
dc.date.available2022-05-29T09:54:35Z-
dc.date.issued2022-05-29-
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/3431-
dc.description.abstractModern room temperature ferroelectrics/piezoelectrics significantly impact advanced nanoelectronics than conventional chemical compounds. Changes in crystallinity modulation, long-range order of atoms in metalloids permits the design of novel materials. The ferroelectric like nature of a single element (selenium, Se) is demonstrated via in-plane (E⊥ar to the Se helical chains in micro-rod (MR)) and out-of-plane (E ∥el to the Se helical chains in MR) polarization. Atomic electron microscopy shows large stacks of covalently bound Se atoms in a c-axis orientation for tip bias voltage-dependent switchable domains with a 180˚ phase and butterfly displacement curves. The single crystalline Se MR has a high in-plane piezoelectric coefficient of 30 pm/V relative to polycrystalline samples due to larger grains, crystal imperfections in MR, and tuned helical chains. The energy conversion of a single Se-MR demonstrated via d13, d12 (or d15) piezoelectric modes.en_US
dc.language.isoen_USen_US
dc.subjectCrystal imperfectionsen_US
dc.subjectFerroelectricityen_US
dc.subjectPiezoelectricityen_US
dc.subjectRaman mappingen_US
dc.subjectSeleniumen_US
dc.subjectSingle crystalline microroden_US
dc.titleCrystallinity modulation originates ferroelectricity like nature in piezoelectric seleniumen_US
dc.typeArticleen_US
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