Impact of temperature on reliability of MFIS HZO-based Ferroelectric tunnel junctions

Abstract

Hafnium oxide-based ferroelectric tunnel junctions (FTJs) are novel nonvolatile memory devices with promising advantages such as non-destructive readout in comparison to conventional ferroelectric random access memories (FRAMs). Reliability aspects of FTJ devices need to be investigated, including their endurance, retention, ferroelectric switching, breakdown characteristics, and memory window (MW). These characteristics exhibit promising results at room temperature; however, further analysis is required for different operating temperatures. Therefore, in this work, we demonstrate the FTJ device characteristics at different temperatures varying from -40 °C to 60 °C. The results indicate that high temperatures cause higher MW of FTJs, whereas the FTJ lifetime increases at lower operating temperatures.