Please use this identifier to cite or link to this item:
http://dspace.iitrpr.ac.in:8080/xmlui/handle/123456789/4477
Title: | Endurance Study of Silicon-Doped Hafnium Oxide (HSO) and Zirconium-Doped Hafnium Oxide (HZO)-Based FeFET Memory |
Authors: | Duhan, P. Ali, T. Khedgarkar, P. Kühnel, K Czernohorsky, M. Rudolph, M. Hoffmann, R. Sünbül, A. Lehninger, D. Schramm, P. Kämpfe, T. Seidel, K. |
Keywords: | FeFETs Logic gates Iron Degradation Silicon Temperature measurement Hafnium oxide |
Issue Date: | 13-May-2024 |
Abstract: | Abstract: We report a detailed characterization of the fluorite-structure-based Si:HfO2 (HSO) and Zr:HfO2 (HZO) ferroelectric (FE) materials integrated into a metal–FE–insulator–semiconductor (MFIS) FE field-effect transistors (FeFETs) gate-stack with the silicon oxynitride (SiON) interface layer. The pressing issue in the emerging FeFET concept is the limited endurance range (104–105) of program/erase cycles and is attributed to the gate-stack degradation. In a gate-first scheme, the effect of dopant type on the endurance performance of the fluorite structure-based FeFETs is investigated. The zirconium (Zr)-doped FeFETs show faster memory window (MW) degradation when compared with silicon (Si)-doped hafnium dioxide (HfO2) FeFETs. The physical mechanism responsible for endurance degradation is identified and attributed to the higher number of traps in the HZO-based FeFETs compared with the HSO ones. |
URI: | http://dspace.iitrpr.ac.in:8080/xmlui/handle/123456789/4477 |
Appears in Collections: | Year-2023 |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Full Text.pdf | 3.57 MB | Adobe PDF | View/Open Request a copy |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.