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DC Field | Value | Language |
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dc.contributor.author | Duhan, P. | - |
dc.contributor.author | Ali, T. | - |
dc.contributor.author | Khedgarkar, P. | - |
dc.contributor.author | Kühnel, K | - |
dc.contributor.author | Czernohorsky, M. | - |
dc.contributor.author | Rudolph, M. | - |
dc.contributor.author | Hoffmann, R. | - |
dc.contributor.author | Sünbül, A. | - |
dc.contributor.author | Lehninger, D. | - |
dc.contributor.author | Schramm, P. | - |
dc.contributor.author | Kämpfe, T. | - |
dc.contributor.author | Seidel, K. | - |
dc.date.accessioned | 2024-05-13T09:11:53Z | - |
dc.date.available | 2024-05-13T09:11:53Z | - |
dc.date.issued | 2024-05-13 | - |
dc.identifier.uri | http://dspace.iitrpr.ac.in:8080/xmlui/handle/123456789/4477 | - |
dc.description.abstract | Abstract: We report a detailed characterization of the fluorite-structure-based Si:HfO2 (HSO) and Zr:HfO2 (HZO) ferroelectric (FE) materials integrated into a metal–FE–insulator–semiconductor (MFIS) FE field-effect transistors (FeFETs) gate-stack with the silicon oxynitride (SiON) interface layer. The pressing issue in the emerging FeFET concept is the limited endurance range (104–105) of program/erase cycles and is attributed to the gate-stack degradation. In a gate-first scheme, the effect of dopant type on the endurance performance of the fluorite structure-based FeFETs is investigated. The zirconium (Zr)-doped FeFETs show faster memory window (MW) degradation when compared with silicon (Si)-doped hafnium dioxide (HfO2) FeFETs. The physical mechanism responsible for endurance degradation is identified and attributed to the higher number of traps in the HZO-based FeFETs compared with the HSO ones. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | FeFETs | en_US |
dc.subject | Logic gates | en_US |
dc.subject | Iron | en_US |
dc.subject | Degradation | en_US |
dc.subject | Silicon | en_US |
dc.subject | Temperature measurement | en_US |
dc.subject | Hafnium oxide | en_US |
dc.title | Endurance Study of Silicon-Doped Hafnium Oxide (HSO) and Zirconium-Doped Hafnium Oxide (HZO)-Based FeFET Memory | en_US |
dc.type | Article | en_US |
Appears in Collections: | Year-2023 |
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