Please use this identifier to cite or link to this item: http://dspace.iitrpr.ac.in:8080/xmlui/handle/123456789/4477
Full metadata record
DC FieldValueLanguage
dc.contributor.authorDuhan, P.-
dc.contributor.authorAli, T.-
dc.contributor.authorKhedgarkar, P.-
dc.contributor.authorKühnel, K-
dc.contributor.authorCzernohorsky, M.-
dc.contributor.authorRudolph, M.-
dc.contributor.authorHoffmann, R.-
dc.contributor.authorSünbül, A.-
dc.contributor.authorLehninger, D.-
dc.contributor.authorSchramm, P.-
dc.contributor.authorKämpfe, T.-
dc.contributor.authorSeidel, K.-
dc.date.accessioned2024-05-13T09:11:53Z-
dc.date.available2024-05-13T09:11:53Z-
dc.date.issued2024-05-13-
dc.identifier.urihttp://dspace.iitrpr.ac.in:8080/xmlui/handle/123456789/4477-
dc.description.abstractAbstract: We report a detailed characterization of the fluorite-structure-based Si:HfO2 (HSO) and Zr:HfO2 (HZO) ferroelectric (FE) materials integrated into a metal–FE–insulator–semiconductor (MFIS) FE field-effect transistors (FeFETs) gate-stack with the silicon oxynitride (SiON) interface layer. The pressing issue in the emerging FeFET concept is the limited endurance range (104–105) of program/erase cycles and is attributed to the gate-stack degradation. In a gate-first scheme, the effect of dopant type on the endurance performance of the fluorite structure-based FeFETs is investigated. The zirconium (Zr)-doped FeFETs show faster memory window (MW) degradation when compared with silicon (Si)-doped hafnium dioxide (HfO2) FeFETs. The physical mechanism responsible for endurance degradation is identified and attributed to the higher number of traps in the HZO-based FeFETs compared with the HSO ones.en_US
dc.language.isoen_USen_US
dc.subjectFeFETsen_US
dc.subjectLogic gatesen_US
dc.subjectIronen_US
dc.subjectDegradationen_US
dc.subjectSiliconen_US
dc.subjectTemperature measurementen_US
dc.subjectHafnium oxideen_US
dc.titleEndurance Study of Silicon-Doped Hafnium Oxide (HSO) and Zirconium-Doped Hafnium Oxide (HZO)-Based FeFET Memoryen_US
dc.typeArticleen_US
Appears in Collections:Year-2023

Files in This Item:
File Description SizeFormat 
Full Text.pdf3.57 MBAdobe PDFView/Open    Request a copy


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.