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DC Field | Value | Language |
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dc.contributor.author | Rawat, A | - |
dc.contributor.author | Rawat, B | - |
dc.date.accessioned | 2024-06-11T13:45:52Z | - |
dc.date.available | 2024-06-11T13:45:52Z | - |
dc.date.issued | 2024-06-11 | - |
dc.identifier.uri | http://dspace.iitrpr.ac.in:8080/xmlui/handle/123456789/4599 | - |
dc.description.abstract | Abstract: As the fabrication of short-channel MoS2-FET has made significant progress, there is a growing need to understand the factors affecting the transfer characteristics for overcoming the variability issue. Even though several experimental works on the MoS2-oxide interfaces have reported the presence of high-density interface trap charge, insight into the device-level performance degradation is still unexplored. To address this gap, we introduce the description of the interface trap states in the self-consistent solutions of 2-D Poisson’s equation and dissipative nonequilibrium Green’s function (NEGF) by modifying the on-site potential energy in the atomic description of the channel. Our results indicate that interface trap states with energy toward the mid-gap energy level from the conduction band significantly increase the OFF-state current due to phonon-assisted source–drain tunneling current with trap states, while the charge trapping in the interface states reduces the ON-state current. It is found that the interface trap states close to the mid-gap severely affect the key device performance metrics, such as OFF-state current ( IOFF ), subthreshold slope (SS), and threshold voltage ( VTH ), for the sub-18 nm gate length. Additionally, the inelastic tunneling through trap states marginally enhances the temperature dependency in SS and VTH of MoS2-FET. The simulation results suggest that minimizing the interface trap states with energy close to mid-gap energy level and trap position around the middle of the channel can considerably reduce the leakage current and improve the short-channel MoS2-FET performance. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Electron traps | en_US |
dc.subject | Performance evaluation | en_US |
dc.subject | Phonons | en_US |
dc.subject | Energy states | en_US |
dc.subject | Scattering | en_US |
dc.subject | Potential energy | en_US |
dc.subject | Photonic band gap | en_US |
dc.title | The Role of Interface Trap States in MoS2-FET Performance: A Full Quantum Mechanical Simulation Study | en_US |
dc.type | Article | en_US |
Appears in Collections: | Year-2023 |
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Full Text.pdf | 7.41 MB | Adobe PDF | View/Open Request a copy |
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