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dc.contributor.authorNishad, A.K.-
dc.contributor.authorSharma, R.-
dc.date.accessioned2016-11-19T05:45:08Z-
dc.date.available2016-11-19T05:45:08Z-
dc.date.issued2016-11-19-
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/471-
dc.description.abstractAn analytical model for the computation of equivalent capacitance in top-contact and side-contact multilayer graphene nanoribbon interconnects is presented, taking into consideration the interlayer coupling. On the basis of this model, it is observed that interlayer capacitance is a dominant factor that severely degrades the performance of graphene interconnects. The proposed model is verified with simulation data obtained using Synopsys Raphael that exhibits excellent accuracy. Further, a theoretical framework for improvement in key interconnect performance indices such as delay, energy-delay product and bandwidth density is provided by inserting metal atoms between the graphene layers in top-contact graphene nanoribbon interconnects.en_US
dc.language.isoen_USen_US
dc.subjectCapacitanceen_US
dc.subjectIntegrated circuit interconnectsen_US
dc.subjectEquivalent capacitanceen_US
dc.subjectGraphene nano-ribbonen_US
dc.subjectInterconnect performanceen_US
dc.titleSelf-consistent capacitance model for multilayer graphene nanoribbon interconnectsen_US
dc.typeArticleen_US
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