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DC Field | Value | Language |
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dc.contributor.author | Nishad, A.K. | - |
dc.contributor.author | Sharma, R. | - |
dc.date.accessioned | 2016-11-19T05:45:08Z | - |
dc.date.available | 2016-11-19T05:45:08Z | - |
dc.date.issued | 2016-11-19 | - |
dc.identifier.uri | http://localhost:8080/xmlui/handle/123456789/471 | - |
dc.description.abstract | An analytical model for the computation of equivalent capacitance in top-contact and side-contact multilayer graphene nanoribbon interconnects is presented, taking into consideration the interlayer coupling. On the basis of this model, it is observed that interlayer capacitance is a dominant factor that severely degrades the performance of graphene interconnects. The proposed model is verified with simulation data obtained using Synopsys Raphael that exhibits excellent accuracy. Further, a theoretical framework for improvement in key interconnect performance indices such as delay, energy-delay product and bandwidth density is provided by inserting metal atoms between the graphene layers in top-contact graphene nanoribbon interconnects. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Capacitance | en_US |
dc.subject | Integrated circuit interconnects | en_US |
dc.subject | Equivalent capacitance | en_US |
dc.subject | Graphene nano-ribbon | en_US |
dc.subject | Interconnect performance | en_US |
dc.title | Self-consistent capacitance model for multilayer graphene nanoribbon interconnects | en_US |
dc.type | Article | en_US |
Appears in Collections: | Year-2015 |
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Full Text.pdf | 361.18 kB | Adobe PDF | View/Open Request a copy |
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