Sunbul, A.; Ali, T.; Hoffmann, R.; Revello, R.; Raffel, Y.; Duhan, P.; Lehninger, D.; Kuhnel, K.; Rudolph, M.; Oehler, S.; Schramm, P.; Czernohorsky, M.; Seidel, K.; Kampfe, T.; Eng, L.M.
(2022-06-23)
Hafnium oxide-based ferroelectric tunnel junctions (FTJs) are novel nonvolatile memory devices with promising advantages such as non-destructive readout in comparison to conventional ferroelectric random access memories ...