INSTITUTIONAL DIGITAL REPOSITORY

Browsing by Author "Hoffmann, R."

Browsing by Author "Hoffmann, R."

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  • Endurance Study of Silicon-Doped Hafnium Oxide (HSO) and Zirconium-Doped Hafnium Oxide (HZO)-Based FeFET Memory 
    Duhan, P.; Ali, T.; Khedgarkar, P.; Kühnel, K; Czernohorsky, M.; Rudolph, M.; Hoffmann, R.; Sünbül, A.; Lehninger, D.; Schramm, P.; Kämpfe, T.; Seidel, K. (2024-05-13)
    Abstract: We report a detailed characterization of the fluorite-structure-based Si:HfO2 (HSO) and Zr:HfO2 (HZO) ferroelectric (FE) materials integrated into a metal–FE–insulator–semiconductor (MFIS) FE field-effect ...
  • Impact of temperature on reliability of MFIS HZO-based Ferroelectric tunnel junctions 
    Sunbul, A.; Ali, T.; Hoffmann, R.; Revello, R.; Raffel, Y.; Duhan, P.; Lehninger, D.; Kuhnel, K.; Rudolph, M.; Oehler, S.; Schramm, P.; Czernohorsky, M.; Seidel, K.; Kampfe, T.; Eng, L.M. (2022-06-23)
    Hafnium oxide-based ferroelectric tunnel junctions (FTJs) are novel nonvolatile memory devices with promising advantages such as non-destructive readout in comparison to conventional ferroelectric random access memories ...