NAGY, D.; ESPIÑEIRA, G.; INDALECIO, G.; GARCÍA-LOUREIRO, A.J.; KALNA, K.; SEOANE, N.
(2022-05-05)
Nanosheet (NS) and nanowire (NW) FET architectures scaled to a gate length (LG) of 16 nm
and below are benchmarked against equivalent FinFETs. The device performance is predicted using a 3D
finite element drift-diffusion/Monte ...