Rajamani, S.; Arora, K.; Belov, A.; Korolev, D.; Nikolskaya, A.; Usov, Y.; Pavlov, D.; Mikhaylov, A.; Tetelbaum, D.; Kumar, M.; Kumar, M.
(2018-12-29)
Gallium oxide nanocrystals encapsulated in Al2O3 film on Si substrate have been synthesized by using ion implantation followed by thermal annealing at 800°C or 900°C. Formation of β-Ga2O3 nanocrystals is confirmed by TEM. ...