Duhan, P.; Ali, T.; Khedgarkar, P.; Kühnel, K; Czernohorsky, M.; Rudolph, M.; Hoffmann, R.; Sünbül, A.; Lehninger, D.; Schramm, P.; Kämpfe, T.; Seidel, K.
(2024-05-13)
Abstract:
We report a detailed characterization of the fluorite-structure-based Si:HfO2 (HSO) and Zr:HfO2 (HZO) ferroelectric (FE) materials integrated into a metal–FE–insulator–semiconductor (MFIS) FE field-effect ...