Abstract:
Transition metal dichalcogenides (TMDs),
such as MoS2, MoSe2, MoTe2, WS2, WSe2, etc., have been
considered as the most promising candidates for energyefficient information processing at ultrascaled devices due
to their decent energy gap of around 1–2 eV and singleatomic thickness. Even though there are many efforts to
explore their performance for digital applications, their
performance considerations for analog/mixed-signal applications are still unexplored. In this regard, we have
assessed the analog/RF performance of TMD-based fieldeffect transistors (TMD-FETs) and investigated their benefits over graphene-FET and black phosphorous-FETs. The
performance analysis is done by an in-house developed
code, which involves the self-consistent solutions of 2-D
Poisson’s equation and nonequilibrium Green’s function
(NEGF) formalism. The results show that MoS2-FET can
offer high intrinsic gain with the intrinsic cutoff frequency
and maximum oscillation frequency in terahertz range.
However, the significant degradation in high-frequency performance of MoS2-FET is observed in the presence of
external resistances and parasitic capacitances. The cutoff
frequency has found a few hundreds of gigahertz range in
the presence of all parasitic conditions. It has also found
that, among TMD-FETs, WSe2-FET could be a promising
candidate for analog/RF integrated circuits with a higher
drive current, intrinsic gain, cutoff frequency, and maximum
oscillation frequency.
