Sethuraman, S.; Tavva, V. K.; Rajamani, K.; Subramanian, C. K.; Kim, K. H.; Hunter, H. C.; Srinivas, M. B.
(2021-06-19)
Spin-transfer torque magneto-resistive randomaccess memory (STT-MRAM) is an exciting new emerging
technology, being considered as a strong candidate to fill the gaps
in the existing memory hierarchy between DRAM and the ...