Effect of annealing parameters and activation top layer on the growth of copper oxide nanowires

dc.contributor.author	Chawla, V.
dc.contributor.author	Sardana, N.
dc.contributor.author	Kaur, H.
dc.contributor.author	Kumar, A.
dc.contributor.author	Chandra, R.
dc.contributor.author	Mishra, S.
dc.date.accessioned	2020-03-09T10:00:41Z
dc.date.available	2020-03-09T10:00:41Z
dc.date.issued	2020-03-09
dc.identifier.uri	http://localhost:8080/xmlui/handle/123456789/1505
dc.description.abstract	The present work focuses on the study of annealing parameters and activation top layer on the growth of copper oxide nanowires. The copper films of varying thickness (60–800 nm) were synthesized on SiO2/Si substrate by DC magnetron sputtering and the samples annealed in terms of different parameters, especially the optimized annealing temperatures from 300 to 700 °C for 2–8 hrs to understand the growth mechanism and to optimize parameters for the nanowire formation. Furthermore, a thin conductive gold film as an activation top layer enhances the density and aspect ratio of the copper oxide nanowires. The orientation of crystal planes was characterized by XRD and the nanowires growth after annealing was characterized by SEM. The changes in the film were analyzed by the Raman spectroscopy.	en_US
dc.language.iso	en_US	en_US
dc.subject	Sputtering	en_US
dc.subject	Copper films	en_US
dc.subject	Nanowires	en_US
dc.subject	Annealing	en_US
dc.subject	Gold layer	en_US
dc.subject	SEM	en_US
dc.title	Effect of annealing parameters and activation top layer on the growth of copper oxide nanowires	en_US
dc.type	Article	en_US