Abstract:
Topological insulators (TIs) have attracted scienti c community in recent years
owing to their remarkable physical properties like bulk band inversion and exotic
surface states. In recent years, the search for novel topological phases have been extended
to topological semi-metals (TSMs) in which extremely large magnetoresistance
(XMR) materials like WTe2, PtSn4, NbP, and rare-earth monopnictides (LnPn, Ln
= La, Ce, Nd, Pr, etc., Pn = Bi, Sb), etc. have attracted tremendous attention. Several
reports on XMR explained its origin by perfect (or nearly perfect) electron-hole
compensation and topological protection. The origin of XMR by perfect electron-hole
compensation is well established by two-band model. Meanwhile, some reports on
XMR infer that non-trivial topological protection by time-reversal symmetry (TRS)
in TSMs suppresses the electron's backscattering in the absence of magnetic eld;
while the presence of magnetic eld breaks TRS, that results into XMR e ect. However,
there are several materials like LaAs, LaSb, which show XMR e ect but have
a lack of topological protection, indicating that the relation between topology and
XMR is not well established.
It is well known that spin-orbit coupling (SOC) is the main ingredient to originate
topological quantum phase transition (TQPT) in a material, and the strength of
SOC can be increased via making heterostructures of suitable materials or chemical
doping or by applying hydrostatic pressure or strain. In this thesis, we discussed three
problems based on each of these factors to investigate the topological phase in the
compounds based on rare-earth monopnictides exhibiting XMR e ect.
In the rst problem, we investigated the topological properties and charge compensation ratio for a heterostructure of trivial and non-trivial XMR material, LaAs and
LaBi, respectively (Chapter 3). In the second problem, we investigated the in
uence
of doping on the topological properties of Lanthanum monopnictides (LaX; X = As
and Sb). For this, we consider three doping arrangements LaAs0:5Bi0:5, LaSb0:5Bi0:5,
and LaAs0:25Sb0:25Bi0:5 (Chapter 4). In the third problem, we investigated the e ect
of pressure on the topological properties of topologically trivial XMR materials, YSb
and TmSb. Then, we studied electron and hole charge density ratio as a function
of observed topological phase under pressure (Chapter 5). The studies provide new
materials as possible candidates for non-trivial topological family and possible XMR
e ect in the proposed heterostructure. It also pave a path to determine the exact
correlation between topology and XMR effect.