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First principle analysis of os-passivated armchair graphene nanoribbons for nanoscale interconnects

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dc.contributor.author Nishad, V. K.
dc.contributor.author Nishad, A. K.
dc.contributor.author Kaushik, B. K.
dc.contributor.author Sharma, R.
dc.date.accessioned 2021-06-13T09:30:05Z
dc.date.available 2021-06-13T09:30:05Z
dc.date.issued 2021-06-13
dc.identifier.uri http://localhost:8080/xmlui/handle/123456789/1804
dc.description.abstract In this paper, transport properties of Osmium (Os)-passivated armchair graphene nanoribbons (AGNRs) have been explored for applications in nanoscale interconnects. Os has been used for passivation in place of Hydrogen (H). In general, H-passivation is used to reduce the edge scattering in AGNRs. However, this increases the bandgap of the structure. In our study, it is found that Ospassivation reduces the edge scattering with improvement in metallicity of AGNRs, which makes it suitable for future nanoscale interconnects. We have extracted key parameters, such as transmission spectrum, I-V characteristics, number of conduction channels, Fermi velocity, kinetic inductance and quantum capacitance. We have compared our results with Fepassivated AGNRs. In case of Os-passivated AGNRs, up to eight conduction channels are seen that result in higher currents of up to 4x as compared to Fe-passivated AGNRs. en_US
dc.language.iso en_US en_US
dc.title First principle analysis of os-passivated armchair graphene nanoribbons for nanoscale interconnects en_US
dc.type Article en_US


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