Abstract:
β-Ga2O3 thin films was grown on cost-effective p-Si(100) substrate by sputtering technique. The evolution of crystalline structure
with growth parameters revealed that the gallium oxide thin film grown on the high-temperature seed layer and various optimised
growth parameters like sputtering power, deposition pressure and pre-substrate annealing has been proved extremely beneficial in
exhibiting excellent crystalline quality. However, the direct growth of β-Ga2O3 on Si substrate with seed-layer was found to be
amorphous in nature. The discussion about the critical role of varied growth conditions were carried in detail. The photoresponse of
the optimized device showed a photoresponsivity of 95.64 AW−1 and a corresponding quantum efficiency of 4.73 × 104
% at
moderate bias under 250 nm illumination which is higher than most of the devices being reported on planar β-Ga2O3 solar-blind
photodetectors deposited on high cost substrates. Moreover, the device showed the high transient response at moderate as well as at
self-bias mode with good reproducibility and stability. The rise and decay time of the photodetector at self-powered mode was
found to be in millisecond (58.3 ms/34.7 ms). This work paves the alternative way towards the fabrication of β-Ga2O3 solar-blind
photodetector on cost-effective substrate and compatible with mature Si technology.
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