Abstract:
Utilizing the electronic analogs of optical phenomena such as anti-reflection coating and resonance for spintronic devices, we propose and
theoretically analyze the design of a spin transfer torque-magnetoresistive random access memory (STT-MRAM) device. The proposed device
consists of a superlattice heterostructure terminated with the anti-reflective regions sandwiched between the fixed and free ferromagnetic layers.
Employing Green’s function spin-transport formalism coupled self-consistently with the stochastic Landau–Lifshitz–Gilbert–Slonczewski
equation, we design an STT-MRAM based on the anti-reflective superlattice magnetic tunnel junction (AR-SLMTJ) device having an ultrahigh
tunnel magnetoresistance ( 3:5 104%) and large spin current. We demonstrate that the STT-MRAM based on the AR-SLMTJ structure
owing to the physics of bandpass spin filtering is nearly 1100% more energy efficient than trilayer magnetic tunnel junction (MTJ) based
STT-MRAM. We also present detailed probabilistic switching and energy analysis to find out the optimal point of operation of a trilayer MTJ
and AR-SLMTJ based STT-MRAM. Our predictions serve as a template to consider the heterostructures for next-generation spintronic device
applications.
