dc.contributor.author | Agrawal, A. V. | |
dc.contributor.author | Lemasters, R. | |
dc.contributor.author | Li, C. | |
dc.contributor.author | Mojibpour, A. | |
dc.contributor.author | Bharadwaj, P. | |
dc.contributor.author | Harutyunyan, H. | |
dc.contributor.author | Kumar, M. | |
dc.date.accessioned | 2021-07-24T09:56:32Z | |
dc.date.available | 2021-07-24T09:56:32Z | |
dc.date.issued | 2021-07-24 | |
dc.identifier.uri | http://localhost:8080/xmlui/handle/123456789/2202 | |
dc.description.abstract | Here, we report the comparative study of enhanced second harmonic generation using defect engineering in pyramid-like MoS2 (P-MoS2) flakes to vertically aligned MoS2 (VA-MoS2) flakes. P-MoS2 and VA-MoS2 is synthesized via the modified chemical vapor deposition technique. The second harmonic generation measurements on P-MoS2 and VA-MoS2 are performed by sweeping the excitation wavelength from 1200 nm to 1310 nm in identical conditions. The P-MoS2 flakes show a high SHG signal. The high SHG signal in pyramid-like MoS2 is attributed to the broken inversion symmetry and high thickness of grown MoS2 flakes. VA-MoS2 flakes under the identical conditions show a 34% enhanced SHG signal in comparison to P-MoS2. The midgap states generated due to defects in the form of S vacancies in VA-MoS2 are responsible for this enhancement. These midgap states confine the photons and result in enhanced SHG properties. Our study will pave a new path to understand the role of 2D material morphology in fabricating versatile optical and photonics devices. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Comparison of enhanced second harmonic generation in pyramid-like in-plane MoS2 flakes to vertically aligned MoS2 flakes | en_US |
dc.type | Article | en_US |