Abstract:
With the recent experimental advancement in the
fabrication of short channel two-dimensional material based fieldeffect transistors (2DM-FETs), it becomes essential to critically
understand their performance for digital and analog applications.
Although extensive research efforts in 2DM-FETs have demonstrated excellent switching performance for ultra-scale devices,
there still exists an intensive demand to understand the RF
and linearity performance for future high-frequency applications.
Therefore, in this work, the RF and linearity performance
metrics for two most emerging 2DMs, such as MoS2 and black
phosphorous (BP), based FETs are examined and compared
with ultra thin-body Si-MOSFET. This performance analysis
is done using a self-developed quantum transport simulation
based on self-consistent solutions of non-equilibrium Green’s
function approach and 2-D Poisson’s equation. The results exhibit
that monolayer BP-FET has a higher ON current and cutoff frequency, but degraded linearity figure-of-merits, such as
higher order voltage intercepts and third order intermodulation
distortions, could limit their use in radio-frequency integrated
circuits. The Si-MOSFET has exhibited enhanced RF linearity
and distortion performance metrics over 2DM-FETs and hence,
promise excellent reliability for analog/RF circuit and sensor
applications.
