Abstract:
In this work, we comprehensively investigate
the performance of CMOS inverters based on 2-D materials
(2DMs), such as MoS2, WSe2, WS2, black phosphorus (BP),
WSe2-MoS2, and benchmark against their silicon (Si)
counterpart for sub-10-nm channel length. The performance
evaluation of the 2DM-based CMOS inverters is done using
an in-house developed multiscale modeling approach,
which translates the atomistic device model into the professional circuit simulation using the Verilog-AMS interface.
Among 2DM-based inverters, heterogeneous WSe2-MoS2
inverter configuration exhibits excellent switching characteristics for 5.6 nm and beyond channel length with a larger
static noise margin, nanowatt-order power dissipation, and
comparative speed to Si-based inverter. Despite lower noise
margins and higher power dissipation, Si-based inverter,
with lower gate capacitance,allows marginally higher speed
than that of 2DM-based inverters. Furthermore, at 3-nm
channel length, static and dynamic performance metrics
of inverter degrade significantly due to more pronounced
short-channel effects; however, MoS2-based inverter
demonstrates a good functionality. The performance analysis and benchmarking show promise and opportunities with
2DM-based devices for future logic applications; however,
optimizing the contact resistance, parasitic capacitances,
and channel length are the key device design parameters
in developing the high-performance CMOS inverter.
