Abstract:
Controlling the light reflection using vertically-aligned nanowires has great importance in fundamental research with interesting applications in
photonic devices. Here, we discuss the spatial- and polarization-dependent reflectivity measurements from the cross-sectional as well as from the
top surface of vertically-aligned disordered silicon nanowires. The gradient variation in an effective refractive index along the nanowire length is
estimated using the cross-sectional reflectivity measurements. We have studied the gradient variation of an effective refractive index profile and
its tunability with the nanowire length. The reflectivity is measured to be as low as 5% irrespective of spatial directions and the polarization of
incident light in a broad wavelength range. This constitutes the signature of a broadband omnidirectional anti-reflector that is scalable with the
nanowire length. The reflectivity measurements are in good agreement with theoretical calculations. Such omnidirectional anti-reflection in a
broad wavelength range is useful for applications such as photon management in photovoltaic devices and disorder-induced light scattering
