Abstract:
Paper describes a simple and cost effective process
for non volatile memory (NVM) device. This method involves
colloidal synthesis of cobalt nanoparticles for their application
in spin coating based NVM device. Cobalt possesses
appropriate work function and large number of density of
states which are favorable features for their application in
NVM device. Further, availability of number of easy methods
for colloidal synthesis of cobalt nanoparticles provide an
opportunity to use such colloidal synthesized nanoparticles for
spin coating based NVM device. The spin coating of colloidal
cobalt nanoparticles, being a key process step to the
fabrication of NVM device, is studied using atomic force
microscopy and energy dispersive X-ray characterizations
methods. The metal-oxide-semiconductor (MOS) NVM
capacitor has been fabricated using 600 rpm for 30 s spin
coating condition. The capacitance-voltage (C-V) response of
the device show a high memory window of 7.5 V for applied
sweep voltage of ±8 V, useful for the achieving big memory
window in actual NVM device. Also, the capacitance-time (Ct) response indicates excellent retention of the fabricated
device.
