Thin layer activation analysis in 16O + 169Tm system at low energies

Abstract

In this paper authors have explored the use of Thin Layer Activation in a material formed by the irradiation of heavy ion beams on the particular target of interest and its further applications from industrial point of view. Activity depth distributions resulting from the irradiation of Thulium-169 by heavy ion Oxygen-16 beams have been calculated. A pre-calibrated high purity germanium detector was used for radioactive counting of samples. The measured cross-sections for different radio-isotopes have been used to deduce the practical yields for several reaction products; 182, 181Ir, 182, 181Os, 181, 178Re, 175Hf, 172Lu from the intensity of characteristic γ-lines at different energies of 16O beam in the energy range≈ 70-100 MeV employing stacked foil activation technique. Calibration curves obtained from various reaction products have been determined with the help of yield curves. The main purpose of this work is to study the surface wear with increased sensitivity by applying heavy ion in thin layer activation technique.