Abstract:
With device dimensions reaching their physical
limits, there has been a tremendous focus on development of post
CMOS technologies. Carbon based transistors, including
graphene and carbon nanotubes, are seen as potential candidates
to replace traditional CMOS devices. In that, floating gate
graphene field effect transistors (F-GFETs) are preferred over
dual gate graphene field effect transistors (D-GFETs) due to their
ability to provide variable threshold voltage using a single power
supply. In this paper, we present a novel analytical model for the
design of a complementary inverter using floating gate bilayer
graphene field-effect transistors (F-GFETs). Our proposed model
describes the i-v characteristics of the F-GFET for all the regions
of operation considering both hole and electron conduction. The
i-v characteristics obtained using our model are compared with
that of D-GFETs . Based on our proposed model, we obtain the
transfer characteristics of a complementary inverter using FGFETs. Our proposed inverter gives better transfer
characteristics when compared with previously reported
inverters using either F-GFET or chemically doped D-GFETs.
