Abstract:
In this paper, performance analysis of Through
Silicon Vias (TSVs) considering various bonding techniques is
investigated. In that, bonding of TSVs using Cu-Sn microbumps,
Cu-Ag microbumps and Cu-Cu direct bonding is considered. We
present SPICE-compatible equivalent circuits for these
configurations using exhaustive simulations performed on
electromagnetic field solver, Ansys Q3D. We analyze these TSV
configurations for various interconnect performance metrics,
such as delay, energy delay product, energy per bit, insertion loss
and bandwidth density. Our analysis gives physical insights into
the effect of microbumps/discontinuities on the TSV
performance. Our analytical results show that vertical
interconnects using Cu-Cu direct bonding significantly
outperforms those using Cu-Ag or Cu-Sn microbumps, which
makes it an excellent candidate for high-speed, low loss vertical
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