Abstract:
In this paper, we propose a novel Vertical-Slit
Field Effect Transistor (VeSFET) with high-k gate dielectrics and
metallic gates with different work function (Φm). The gate
dielectric material and gate electrodes in traditional VeSFETs
are replaced by high-k dielectrics and metals, respectively. We
investigate the effect of these on the electrical characteristics of
our proposed device. Various performance parameters such as
Drain Induced Barrier Lowering (DIBL), Sub-threshold Swing
(SS), Threshold Voltage (VT), leakage power (Poff), propagation
delay, Ion/Ioff ratio are obtained using exhaustive TCAD
simulations and compared with that of conventional VeSFETs.
Our analysis shows that the proposed high-k metal gate VeSFET
exhibits higher Ion/Ioff ratio, lower leakage current, lower leakage
power, lower delay with near ideal SS and minimum DIBL. Also,
our proposed device exhibits higher on-current. This makes it a
potential candidate for ultra-low power, high-speed applications
with reduced short channel effects. To illustrate the benefits of
our proposed device, we design a complementary inverter using
the proposed high-k metal VeSFETs. Our analysis clearly
highlights the improvement in delay and power dissipation
obtained using the proposed structure when compared to that
using conventional VeSFETs
