INSTITUTIONAL DIGITAL REPOSITORY

Dual growth modes in ion bombarded Si surfaces

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dc.contributor.author Dhillon, P. K.
dc.contributor.author Sarkar, S.
dc.date.accessioned 2021-10-26T19:02:05Z
dc.date.available 2021-10-26T19:02:05Z
dc.date.issued 2021-10-27
dc.identifier.uri http://localhost:8080/xmlui/handle/123456789/3146
dc.description.abstract Morphological studies were done on Si (001) surfaces after rastering them with a 1 keV O2 + ion beam at an angle. The resulting mounded morphology was studied using atomic force microscopy (AFM) measurements. The roughness at different length scales were further extracted and quantified from AFM measurements using scaling analysis. Results indicate two growth regimes of the evolving surface which were evident from the power spectral density (PSD) and interface width analysis of the eroded surfaces. Initially the growth is unstable followed by a stable regime of the nanostructures evolved after about 35 minutes of erosion. Temporal studies done on these surfaces show the onset of shadowing at higher sputtering times thus indicating the breakdown of the growth model at these times. en_US
dc.language.iso en_US en_US
dc.subject Sputtering en_US
dc.subject atomic force microscopy en_US
dc.subject morphology evolution en_US
dc.title Dual growth modes in ion bombarded Si surfaces en_US
dc.type Article en_US


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