INSTITUTIONAL DIGITAL REPOSITORY

Full CMOS implementation of bidirectional associative memory neural network with analog memristive synapse

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dc.contributor.author Vohra, S. K.
dc.contributor.author Thomas, S.
dc.contributor.author Sakare, M.
dc.contributor.author Das, D. M.
dc.date.accessioned 2021-11-16T18:56:47Z
dc.date.available 2021-11-16T18:56:47Z
dc.date.issued 2021-11-16
dc.identifier.uri http://localhost:8080/xmlui/handle/123456789/3192
dc.description.abstract Memristor is a computational and area efficient substitute for resistive synapse in neural networks as it provides tunable and non-volatile storage of synaptic weights. Full CMOS circuit realisation of a 6 × 6 Bidirectional Associative Memory (BAM) neural network with CMOS memristor synapse is implemented in this paper. To show the BAM neural network’s ability to recall its pattern, we have taken the training set of three Tetris pattern pairs, and corresponding synapse weights are calculated using MATLAB. We have integrated the proposed tunable CMOS memristor emulator in the crossbar for storing the synaptic weights. The CMOS circuit implementation of the BAM neural network is validated with the simulation results in 0.18µm CMOS technology. en_US
dc.language.iso en_US en_US
dc.subject Artificial neural networks en_US
dc.subject Bidirectional associative memory (BAM) en_US
dc.subject Memristor en_US
dc.subject Memristor crossbar en_US
dc.subject Synaptic weight. en_US
dc.title Full CMOS implementation of bidirectional associative memory neural network with analog memristive synapse en_US
dc.type Article en_US


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