Abstract:
2D MoS2 holds immense potential for electronic and optoelectronic applications due to its
unique characteristics. However, the atomic-scale thickness of MoS2 hinders the optical
absorbance, thereby limiting its photodetection capability. Vertically-aligned MoS2 (VA-MoS2) has an advantage of strong optical absorption and quick intra-layer transport, offering high speed operation. The coupling of plasmonic metal nanostructure with MoS2 can further enhance the light–matter interaction. Pt/Pd (as opposed to Ag/Au) are more promising to design nextgeneration nano-plasmonic devices due to their intense interband activity over a broad spectral range. Herein, we report Pt nanoparticle (NPs) enhanced broadband photoresponse in VA-MoS2. The optical absorbance of MoS2 is enhanced after the integration of Pt NPs, with a four-fold enhancement in photocurrent. The formation of Schottky junction at Pt-MoS2 interface inhibits electron transmission, suppressing the dark current and substantially reducing NEP. The plasmonic-enabled photodetector shows enhanced responsivity (432 A W−1, 800 nm) and detectivity (1.85 × 1014 Jones, 5 V) with a low response time (87 ms/84 ms), attributed to faster carrier transport. Additionally, a theoretical approach is adopted to calculate wavelength dependent responsivity, which matches well with experimental results. These findings offer a facile approach to modulate the performance of next-generation optoelectronic devices for practical applications.
