Analytical model for inverter design using floating gate graphene field effect transistors

Abstract

With device dimensions reaching their physical limits, there has been a tremendous focus on development of post CMOS technologies. Carbon based transistors, including graphene and carbon nanotubes, are seen as potential candidates to replace traditional CMOS devices. In that, floating gate graphene field effect transistors (F-GFETs) are preferred over dual gate graphene field effect transistors (D-GFETs) due to their ability to provide variable threshold voltage using a single power supply. In this paper, we present a novel analytical model for the design of a complementary inverter using floating gate bilayer graphene field-effect transistors (F-GFETs). Our proposed model describes the i-v characteristics of the F-GFET for all the regions of operation considering both hole and electron conduction. The i-v characteristics obtained using our model are compared with that of D-GFETs . Based on our proposed model, we obtain the transfer characteristics of a complementary inverter using FGFETs. Our proposed inverter gives better transfer characteristics when compared with previously reported inverters using either F-GFET or chemically doped D-GFETs.